Furthermore, in N-polar GaN, a thick GaN-cap layer can be applied. The N-polar HEMT epi structure featuring a GaN cap is often termed a “deep recess HEMT” due to its requirement for recess etching to ...

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Department of Biochemistry, University of Groningen, Nijenborgh 3, Groningen 9747 AG, The Netherlands ...

Some Investment Trusts include direct costs as part of their Ongoing charge, such as the annual management charge. For those that show Ongoing charges as 0% or a dash please review the investment ...

This investment trust can be held in an Investment ISA, SIPP and Investment Account Some Investment Trusts include direct costs as part of their Ongoing charge, such as the annual management charge.

The hydrothermal vent tubeworm Riftia pachyptila hosts a single 16S rRNA phylotype of intracellular sulfur-oxidizing symbionts, which vary considerably in cell morphology and exhibit a remarkable ...