Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide (SiC ...
Santa Clara, CA and Kyoto, Japan, Aug. 29, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of power modules equipped with 4 th generation SiC MOSFET bare chips for the ...
Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...
The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.
Thomas Stierle, CEO E-Mobility Division at Schaeffler (left) and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM A strategic partnership between ROHM and Schaeffler to ...
Rohm Semiconductor has announced the use of power modules equipped with the company's fourth-generation SiC MOSFET bare chips for traction inverters in three ZEEKR EV models manufactured by Zhejiang ...
Santa Clara, CA and Kyoto, Japan, June 11, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced four new models as part of the TRCDRIVE pack™ series with 2-in-1 SiC molded modules (two ...
Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...
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