The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
The drive to reduce fuel consumption and CO 2 emissions by automobile manufacturers worldwide is clearly aided by the electrification of accessories and powertrains alike. Such developments become ...
International Rectifier has introduced the IRF4000, a 100-V-rated device integrating four HEXFET MOSFETs into a single Power MLP package for Power-over-Ethernet (PoE) applications. The new device ...
LEM and Semikron Danfoss have teamed up to monitor current in automotive silicon carbide power mosfet modules. The result is ‘Nano’, a current sensor that is compatible with Semikron’s DCM SiC power ...
DUBLIN, Oct. 7, 2015 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/4rv28f/cree_1700v_sic) has announced the addition of the "CREE ...
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