A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...

(Nanowerk Spotlight) Advances in semiconductor technology have reached a critical turning point. Silicon-based transistor technology, central to electronics, faces increasing limitations due to the ...

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...

GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...

Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology. Complementing the company’s ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...

The collaboration merges ROHM’s device development expertise with TSMC’s advanced GaN-on-silicon technology. Credit: ROHM/Globenewswire. ROHM has entered a strategic partnership with Taiwan ...

Japan-based Rohm Semiconductor and Taiwan Semiconductor Manufacturing Company (TSMC) have announced a strategic partnership to advance the development and mass production of gallium nitride (GaN) ...

ESPOO, Finland, May 1, 2025 /PRNewswire/ -- Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 ...

Thermal treating of metallic magneiusm on gallium nitride semiconductor results in the formation of a distinctive superlattice structure. Magnesium, nitrogen, gallium atoms are shown in orange, blue, ...